Method and system for gas flow mitigation of molecular contamination of optics
A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity,...
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creator | Delgado Gildardo Klebanoff Lennie Arienti Marco Tahmassebpur Mohammed Harb Salam Garcia Rudy Johnson Terry Scott Sarah |
description | A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9874512B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9874512B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9874512B23</originalsourceid><addsrcrecordid>eNqNyjEOwjAMQNEsDAi4gy_QgQKCrlQgFliAubJSp1hK4qg2QtyeBTEz_eH9qbucyR7SA-Ye9K1GCYKMMKBCiPKCxMYDGksGCZAkkn9GHMFLNkycfyTF2OvcTQJGpcW3MwfHw609VVSkIy3oKZN192uz2643y3pfr_5YProqNos</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and system for gas flow mitigation of molecular contamination of optics</title><source>esp@cenet</source><creator>Delgado Gildardo ; Klebanoff Lennie ; Arienti Marco ; Tahmassebpur Mohammed ; Harb Salam ; Garcia Rudy ; Johnson Terry ; Scott Sarah</creator><creatorcontrib>Delgado Gildardo ; Klebanoff Lennie ; Arienti Marco ; Tahmassebpur Mohammed ; Harb Salam ; Garcia Rudy ; Johnson Terry ; Scott Sarah</creatorcontrib><description>A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; TESTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180123&DB=EPODOC&CC=US&NR=9874512B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180123&DB=EPODOC&CC=US&NR=9874512B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Delgado Gildardo</creatorcontrib><creatorcontrib>Klebanoff Lennie</creatorcontrib><creatorcontrib>Arienti Marco</creatorcontrib><creatorcontrib>Tahmassebpur Mohammed</creatorcontrib><creatorcontrib>Harb Salam</creatorcontrib><creatorcontrib>Garcia Rudy</creatorcontrib><creatorcontrib>Johnson Terry</creatorcontrib><creatorcontrib>Scott Sarah</creatorcontrib><title>Method and system for gas flow mitigation of molecular contamination of optics</title><description>A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAMQNEsDAi4gy_QgQKCrlQgFliAubJSp1hK4qg2QtyeBTEz_eH9qbucyR7SA-Ye9K1GCYKMMKBCiPKCxMYDGksGCZAkkn9GHMFLNkycfyTF2OvcTQJGpcW3MwfHw609VVSkIy3oKZN192uz2643y3pfr_5YProqNos</recordid><startdate>20180123</startdate><enddate>20180123</enddate><creator>Delgado Gildardo</creator><creator>Klebanoff Lennie</creator><creator>Arienti Marco</creator><creator>Tahmassebpur Mohammed</creator><creator>Harb Salam</creator><creator>Garcia Rudy</creator><creator>Johnson Terry</creator><creator>Scott Sarah</creator><scope>EVB</scope></search><sort><creationdate>20180123</creationdate><title>Method and system for gas flow mitigation of molecular contamination of optics</title><author>Delgado Gildardo ; Klebanoff Lennie ; Arienti Marco ; Tahmassebpur Mohammed ; Harb Salam ; Garcia Rudy ; Johnson Terry ; Scott Sarah</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9874512B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Delgado Gildardo</creatorcontrib><creatorcontrib>Klebanoff Lennie</creatorcontrib><creatorcontrib>Arienti Marco</creatorcontrib><creatorcontrib>Tahmassebpur Mohammed</creatorcontrib><creatorcontrib>Harb Salam</creatorcontrib><creatorcontrib>Garcia Rudy</creatorcontrib><creatorcontrib>Johnson Terry</creatorcontrib><creatorcontrib>Scott Sarah</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Delgado Gildardo</au><au>Klebanoff Lennie</au><au>Arienti Marco</au><au>Tahmassebpur Mohammed</au><au>Harb Salam</au><au>Garcia Rudy</au><au>Johnson Terry</au><au>Scott Sarah</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and system for gas flow mitigation of molecular contamination of optics</title><date>2018-01-23</date><risdate>2018</risdate><abstract>A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING |
title | Method and system for gas flow mitigation of molecular contamination of optics |
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