Non-volatile multi-level-cell memory with decoupled bits for higher performance and energy efficiency

A non-volatile multi-level cell ("MLC") memory device is disclosed. The memory device has an array of non-volatile memory cells, an array of non-volatile memory cells, with each non-volatile memory cell storing multiple groups of bits. A row buffer in the memory device has multiple buffer...

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Bibliographische Detailangaben
Hauptverfasser: Yoon Han Bin, Muralimanohar Naveen, Jouppi Norman Paul
Format: Patent
Sprache:eng
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Zusammenfassung:A non-volatile multi-level cell ("MLC") memory device is disclosed. The memory device has an array of non-volatile memory cells, an array of non-volatile memory cells, with each non-volatile memory cell storing multiple groups of bits. A row buffer in the memory device has multiple buffer portions, each buffer portion storing one or more bits from the memory cells and having different read and write latencies and energies.