Electronic device and method for fabricating the same

Electronic device and method for fabricating the same

An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kim Yang-Kon, Lim Jong-Koo, Kim Jeong-Myeong
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Kim Yang-Kon
Lim Jong-Koo
Kim Jeong-Myeong
description An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9847474B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9847474B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9847474B23</originalsourceid><addsrcrecordid>eNrjZDB1zUlNLinKz8tMVkhJLctMTlVIzEtRyE0tychPUUjLL1JIS0wqykxOLMnMS1coyUhVKE7MTeVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZYWJuZA6GRkTIQSAPS_LLg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Electronic device and method for fabricating the same</title><source>esp@cenet</source><creator>Kim Yang-Kon ; Lim Jong-Koo ; Kim Jeong-Myeong</creator><creatorcontrib>Kim Yang-Kon ; Lim Jong-Koo ; Kim Jeong-Myeong</creatorcontrib><description>An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20171219&amp;DB=EPODOC&amp;CC=US&amp;NR=9847474B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20171219&amp;DB=EPODOC&amp;CC=US&amp;NR=9847474B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim Yang-Kon</creatorcontrib><creatorcontrib>Lim Jong-Koo</creatorcontrib><creatorcontrib>Kim Jeong-Myeong</creatorcontrib><title>Electronic device and method for fabricating the same</title><description>An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB1zUlNLinKz8tMVkhJLctMTlVIzEtRyE0tychPUUjLL1JIS0wqykxOLMnMS1coyUhVKE7MTeVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZYWJuZA6GRkTIQSAPS_LLg</recordid><startdate>20171219</startdate><enddate>20171219</enddate><creator>Kim Yang-Kon</creator><creator>Lim Jong-Koo</creator><creator>Kim Jeong-Myeong</creator><scope>EVB</scope></search><sort><creationdate>20171219</creationdate><title>Electronic device and method for fabricating the same</title><author>Kim Yang-Kon ; Lim Jong-Koo ; Kim Jeong-Myeong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9847474B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim Yang-Kon</creatorcontrib><creatorcontrib>Lim Jong-Koo</creatorcontrib><creatorcontrib>Kim Jeong-Myeong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim Yang-Kon</au><au>Lim Jong-Koo</au><au>Kim Jeong-Myeong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Electronic device and method for fabricating the same</title><date>2017-12-19</date><risdate>2017</risdate><abstract>An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9847474B2
source esp@cenet
subjects CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Electronic device and method for fabricating the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T22%3A42%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim%20Yang-Kon&rft.date=2017-12-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9847474B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true