Method of manufacturing semiconductor device that includes forming junction field effect transistor including recessed gate

A method of manufacturing a semiconductor device that includes a junction field effect transistor, the junction field effect transistor including a semiconductor substrate of a first conductivity type, an epitaxial layer of the first conductivity type formed on the semiconductor substrate, a source...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Arai Kouichi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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