Method for fabricating semiconductor device

A method for fabricating semiconductor device is disclosed. First, a substrate having a fin-shaped structure thereon is provided, a spacer is formed adjacent to the fin-shaped structure, and the spacer is used as mask to remove part of the substrate for forming an isolation trench, in which the isol...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Huang Tong-Jyun, Lin Rong-Sin, Yang Chun-Yao, Jenq Jyh-Shyang, Hsieh Ming-Shiou, Feng Li-Wei, Tsai Shih-Hung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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