Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines

A method includes providing a structure having a first hardmask layer, second hardmask layer and mandrel layer disposed respectively over a dielectric stack. An array of mandrels is patterned into the mandrel layer. A gamma trench is patterned into the second hardmask layer and between the mandrels....

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Bibliographische Detailangaben
Hauptverfasser: Bouche Guillaume, Stephens Jason Eugene
Format: Patent
Sprache:eng
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