Semiconductor device and manufacturing method thereof

The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent ba...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Oshima Takayuki, Miura Noriko, Ishikawa Kensuke, Saito Tatsuyuki, Noguchi Junji, Katsuyama Kiyomi, Iwasaki Tomio, Tamaru Tsuyoshi, Yamaguchi Hizuru
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!