Integrated semiconductor device and manufacturing method therefor

An integrated device includes a field effect transistor formed within and upon an active region of a substrate and a resistor formed on an isolation region of the substrate. The field effect transistor includes a gate stacked structure having respective portions of a dielectric layer, a first conduc...

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1. Verfasser:	Hong Zhongshan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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