Semiconductor devices having a TSV, a front-side bumping pad, and a back-side bumping pad

Semiconductor devices having a TSV, a front-side bumping pad, and a back-side bumping pad

Semiconductor devices are provided. The semiconductor devices include a substrate, a first interlayer insulating layer disposed on a front-side of the substrate, a TSV structure passing through the first interlayer insulating layer and the substrate. The TSV structure has a bottom end protruding fro...

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Hauptverfasser: Lee Ho-Jin, Park Jisoon, Park Byunglyul, An Jinho
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Lee Ho-Jin
Park Jisoon
Park Byunglyul
An Jinho
description Semiconductor devices are provided. The semiconductor devices include a substrate, a first interlayer insulating layer disposed on a front-side of the substrate, a TSV structure passing through the first interlayer insulating layer and the substrate. The TSV structure has a bottom end protruding from a back-side of the substrate, a back-side insulating layer and a back-side passivation layer disposed on the back-side of the substrate, and a bumping pad buried in the back-side insulating layer and the back-side passivation layer and disposed on the bottom end of the TSV structure. The bottom end of the TSV structure protrudes into the back-side bumping pad, and top surfaces of the back-side passivation layer and the back-side bumping pad are coplanar.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor devices having a TSV, a front-side bumping pad, and a back-side bumping pad
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