Flash memory system and word line interleaving method thereof

Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving op...

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Hauptverfasser:	Kim Yongjune, Son Hong Rak, Kong Junjin, Choi Seonghyeog
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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creator	Kim Yongjune Son Hong Rak Kong Junjin Choi Seonghyeog
description	Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.
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subjects	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
title	Flash memory system and word line interleaving method thereof
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