Flexible device
In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the li...
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| creator | Wang Tai-Jui Su Bo-Yuan Chang Tsu-Chiang Su Ching-Wen Yao Hsiao-Chiang |
| description | In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm˜1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9786790B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9786790B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9786790B23</originalsourceid><addsrcrecordid>eNrjZOB3y0mtyEzKSVVISS3LTE7lYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocGW5hZm5pYGTkbGRCgBAEJuHp8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Flexible device</title><source>esp@cenet</source><creator>Wang Tai-Jui ; Su Bo-Yuan ; Chang Tsu-Chiang ; Su Ching-Wen ; Yao Hsiao-Chiang</creator><creatorcontrib>Wang Tai-Jui ; Su Bo-Yuan ; Chang Tsu-Chiang ; Su Ching-Wen ; Yao Hsiao-Chiang</creatorcontrib><description>In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm˜1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171010&DB=EPODOC&CC=US&NR=9786790B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171010&DB=EPODOC&CC=US&NR=9786790B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wang Tai-Jui</creatorcontrib><creatorcontrib>Su Bo-Yuan</creatorcontrib><creatorcontrib>Chang Tsu-Chiang</creatorcontrib><creatorcontrib>Su Ching-Wen</creatorcontrib><creatorcontrib>Yao Hsiao-Chiang</creatorcontrib><title>Flexible device</title><description>In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm˜1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOB3y0mtyEzKSVVISS3LTE7lYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocGW5hZm5pYGTkbGRCgBAEJuHp8</recordid><startdate>20171010</startdate><enddate>20171010</enddate><creator>Wang Tai-Jui</creator><creator>Su Bo-Yuan</creator><creator>Chang Tsu-Chiang</creator><creator>Su Ching-Wen</creator><creator>Yao Hsiao-Chiang</creator><scope>EVB</scope></search><sort><creationdate>20171010</creationdate><title>Flexible device</title><author>Wang Tai-Jui ; Su Bo-Yuan ; Chang Tsu-Chiang ; Su Ching-Wen ; Yao Hsiao-Chiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9786790B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang Tai-Jui</creatorcontrib><creatorcontrib>Su Bo-Yuan</creatorcontrib><creatorcontrib>Chang Tsu-Chiang</creatorcontrib><creatorcontrib>Su Ching-Wen</creatorcontrib><creatorcontrib>Yao Hsiao-Chiang</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang Tai-Jui</au><au>Su Bo-Yuan</au><au>Chang Tsu-Chiang</au><au>Su Ching-Wen</au><au>Yao Hsiao-Chiang</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Flexible device</title><date>2017-10-10</date><risdate>2017</risdate><abstract>In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm˜1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Flexible device |
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