Methods for forming semiconductor devices with stepped bond pads

A method for forming a semiconductor structure includes forming a bond pad over a last metal layer of the semiconductor structure wherein the bond pad includes a wire bond region; and recessing the wire bond region such that the wire bond region has a first thickness and a region of the bond pad out...

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Hauptverfasser: Tran Tu-Anh N, Junker Kurt H
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creator Tran Tu-Anh N
Junker Kurt H
description A method for forming a semiconductor structure includes forming a bond pad over a last metal layer of the semiconductor structure wherein the bond pad includes a wire bond region; and recessing the wire bond region such that the wire bond region has a first thickness and a region of the bond pad outside the wire bond region has a second thickness that is greater than the first thickness.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Methods for forming semiconductor devices with stepped bond pads
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