NAND flash memory comprising current sensing page buffer

Disclosed herein is a NAND flash memory comprising a bit-line and a page buffer, the page buffer comprising: a first switching circuit arranged between a first node and the bit-line; a third switching circuit arranged between the first node and a sensing node and configured to discharge the sensing...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Missiroli Chiara
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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