Multichannel devices with gate structures to increase breakdown voltage

Multichannel devices with gate structures to increase breakdown voltage

A transistor device is provided that includes a base structure and a superlattice structure that overlies the base structure. The superlattice structure comprises a multichannel ridge having sides that extend to the base structure. The multichannel ridge comprises a plurality of heterostructures tha...

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Hauptverfasser: Freitag Ronald G, Howell Robert S, Henry Howell George, Nechay Bettina A, Parke Justin Andrew, Stewart Eric J
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Freitag Ronald G
Howell Robert S
Henry Howell George
Nechay Bettina A
Parke Justin Andrew
Stewart Eric J
description A transistor device is provided that includes a base structure and a superlattice structure that overlies the base structure. The superlattice structure comprises a multichannel ridge having sides that extend to the base structure. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge. A three-sided gate configuration is provided that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth. The three-sided gate configuration is configured to re-distribute peak electric fields along the three-sided gate configuration to facilitate the increase in breakdown voltage of the transistor device.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Multichannel devices with gate structures to increase breakdown voltage
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