Photonic bandgap structure
A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectri...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | de Ceglia Domenico Scalora Michael Vincenti Maria Antonietta Cappeddu Mirko Giuseppe |
description | A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectric constants. The layers are arranged and stacked, and the thicknesses and materials for the semiconductor layers and conductive layers are selected to realize desired absorption, transmission, and reflection characteristics. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9768337B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9768337B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9768337B23</originalsourceid><addsrcrecordid>eNrjZJAKyMgvyc_LTFZISsxLSU8sUCguKSpNLiktSuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZbmZhbGxuZORsZEKAEAJ3AjKw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Photonic bandgap structure</title><source>esp@cenet</source><creator>de Ceglia Domenico ; Scalora Michael ; Vincenti Maria Antonietta ; Cappeddu Mirko Giuseppe</creator><creatorcontrib>de Ceglia Domenico ; Scalora Michael ; Vincenti Maria Antonietta ; Cappeddu Mirko Giuseppe</creatorcontrib><description>A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectric constants. The layers are arranged and stacked, and the thicknesses and materials for the semiconductor layers and conductive layers are selected to realize desired absorption, transmission, and reflection characteristics.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170919&DB=EPODOC&CC=US&NR=9768337B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170919&DB=EPODOC&CC=US&NR=9768337B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>de Ceglia Domenico</creatorcontrib><creatorcontrib>Scalora Michael</creatorcontrib><creatorcontrib>Vincenti Maria Antonietta</creatorcontrib><creatorcontrib>Cappeddu Mirko Giuseppe</creatorcontrib><title>Photonic bandgap structure</title><description>A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectric constants. The layers are arranged and stacked, and the thicknesses and materials for the semiconductor layers and conductive layers are selected to realize desired absorption, transmission, and reflection characteristics.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAKyMgvyc_LTFZISsxLSU8sUCguKSpNLiktSuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZbmZhbGxuZORsZEKAEAJ3AjKw</recordid><startdate>20170919</startdate><enddate>20170919</enddate><creator>de Ceglia Domenico</creator><creator>Scalora Michael</creator><creator>Vincenti Maria Antonietta</creator><creator>Cappeddu Mirko Giuseppe</creator><scope>EVB</scope></search><sort><creationdate>20170919</creationdate><title>Photonic bandgap structure</title><author>de Ceglia Domenico ; Scalora Michael ; Vincenti Maria Antonietta ; Cappeddu Mirko Giuseppe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9768337B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>de Ceglia Domenico</creatorcontrib><creatorcontrib>Scalora Michael</creatorcontrib><creatorcontrib>Vincenti Maria Antonietta</creatorcontrib><creatorcontrib>Cappeddu Mirko Giuseppe</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>de Ceglia Domenico</au><au>Scalora Michael</au><au>Vincenti Maria Antonietta</au><au>Cappeddu Mirko Giuseppe</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photonic bandgap structure</title><date>2017-09-19</date><risdate>2017</risdate><abstract>A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectric constants. The layers are arranged and stacked, and the thicknesses and materials for the semiconductor layers and conductive layers are selected to realize desired absorption, transmission, and reflection characteristics.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US9768337B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Photonic bandgap structure |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T16%3A09%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=de%20Ceglia%20Domenico&rft.date=2017-09-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9768337B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |