Manufacturing method for semiconductor device

Manufacturing method for semiconductor device

Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device. An opening is formed in an insulating film formed over a semiconductor substrate. At that time, a mask layer for formation of the opening is formed over the insulating film. The i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Hanawa Toshikazu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Hanawa Toshikazu
description Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device. An opening is formed in an insulating film formed over a semiconductor substrate. At that time, a mask layer for formation of the opening is formed over the insulating film. The insulating film is dry etched and then wet etched. The dry etching step is finished before the semiconductor substrate is exposed at the bottom of the opening, and the wet etching step is finished after the semiconductor substrate is exposed at the bottom of the opening.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9761685B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9761685B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9761685B23</originalsourceid><addsrcrecordid>eNrjZND1TcwrTUtMLiktysxLV8hNLcnIT1FIyy9SKE7NzUzOz0spTS4B8lJSyzKTU3kYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSXxosKW5maGZhamTkTERSgCyDiqF</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacturing method for semiconductor device</title><source>esp@cenet</source><creator>Hanawa Toshikazu</creator><creatorcontrib>Hanawa Toshikazu</creatorcontrib><description>Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device. An opening is formed in an insulating film formed over a semiconductor substrate. At that time, a mask layer for formation of the opening is formed over the insulating film. The insulating film is dry etched and then wet etched. The dry etching step is finished before the semiconductor substrate is exposed at the bottom of the opening, and the wet etching step is finished after the semiconductor substrate is exposed at the bottom of the opening.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170912&amp;DB=EPODOC&amp;CC=US&amp;NR=9761685B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170912&amp;DB=EPODOC&amp;CC=US&amp;NR=9761685B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hanawa Toshikazu</creatorcontrib><title>Manufacturing method for semiconductor device</title><description>Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device. An opening is formed in an insulating film formed over a semiconductor substrate. At that time, a mask layer for formation of the opening is formed over the insulating film. The insulating film is dry etched and then wet etched. The dry etching step is finished before the semiconductor substrate is exposed at the bottom of the opening, and the wet etching step is finished after the semiconductor substrate is exposed at the bottom of the opening.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND1TcwrTUtMLiktysxLV8hNLcnIT1FIyy9SKE7NzUzOz0spTS4B8lJSyzKTU3kYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSXxosKW5maGZhamTkTERSgCyDiqF</recordid><startdate>20170912</startdate><enddate>20170912</enddate><creator>Hanawa Toshikazu</creator><scope>EVB</scope></search><sort><creationdate>20170912</creationdate><title>Manufacturing method for semiconductor device</title><author>Hanawa Toshikazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9761685B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Hanawa Toshikazu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hanawa Toshikazu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method for semiconductor device</title><date>2017-09-12</date><risdate>2017</risdate><abstract>Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device. An opening is formed in an insulating film formed over a semiconductor substrate. At that time, a mask layer for formation of the opening is formed over the insulating film. The insulating film is dry etched and then wet etched. The dry etching step is finished before the semiconductor substrate is exposed at the bottom of the opening, and the wet etching step is finished after the semiconductor substrate is exposed at the bottom of the opening.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9761685B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Manufacturing method for semiconductor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T13%3A24%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Hanawa%20Toshikazu&rft.date=2017-09-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9761685B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true