High voltage CMOS with triple gate oxide

An integrated circuit containing a first plurality of MOS transistors operating in a low voltage range, and a second plurality of MOS transistors operating in a mid voltage range, may also include a high-voltage MOS transistor which operates in a third voltage range significantly higher than the low...

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Bibliographische Detailangaben

Hauptverfasser:	Hu Binghua, Sridhar Seetharaman, Pendharkar Sameer, Hao Pinghai, Jacobs Jarvis
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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