Circuits and methods for performance optimization of SRAM memory

In described examples, a memory controller circuit controls accesses to an SRAM circuit. Precharge mode control circuitry outputs: a burst mode enable signal to the SRAM circuit indicating that a series of SRAM cells along a selected row of SRAM cells will be accessed; a precharge first mode signal...

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Hauptverfasser: Roine Per Torstein, Mehendale Mahesh, Gullapalli Vamsi, Seetharaman Premkumar, Menezes Vinod
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creator Roine Per Torstein
Mehendale Mahesh
Gullapalli Vamsi
Seetharaman Premkumar
Menezes Vinod
description In described examples, a memory controller circuit controls accesses to an SRAM circuit. Precharge mode control circuitry outputs: a burst mode enable signal to the SRAM circuit indicating that a series of SRAM cells along a selected row of SRAM cells will be accessed; a precharge first mode signal to the SRAM circuit indicating that a first access along the selected row will occur; and a precharge last mode signal to the SRAM circuit indicating that a last access along the selected row will occur. The SRAM circuit includes an array of SRAM cells arranged in rows and columns to store data. Each SRAM cell is coupled to: a corresponding word line along a row of SRAM cells; and a corresponding pair of complementary bit lines.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9734896B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9734896B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9734896B23</originalsourceid><addsrcrecordid>eNrjZHBwzixKLs0sKVZIzEtRyE0tychPKVZIyy9SKEgtAlK5iXnJqQr5BSWZuZlViSWZ-XkK-WkKwUGOvkDFuflFlTwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JD402NLc2MTC0szJyJgIJQByLzEj</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Circuits and methods for performance optimization of SRAM memory</title><source>esp@cenet</source><creator>Roine Per Torstein ; Mehendale Mahesh ; Gullapalli Vamsi ; Seetharaman Premkumar ; Menezes Vinod</creator><creatorcontrib>Roine Per Torstein ; Mehendale Mahesh ; Gullapalli Vamsi ; Seetharaman Premkumar ; Menezes Vinod</creatorcontrib><description>In described examples, a memory controller circuit controls accesses to an SRAM circuit. Precharge mode control circuitry outputs: a burst mode enable signal to the SRAM circuit indicating that a series of SRAM cells along a selected row of SRAM cells will be accessed; a precharge first mode signal to the SRAM circuit indicating that a first access along the selected row will occur; and a precharge last mode signal to the SRAM circuit indicating that a last access along the selected row will occur. The SRAM circuit includes an array of SRAM cells arranged in rows and columns to store data. Each SRAM cell is coupled to: a corresponding word line along a row of SRAM cells; and a corresponding pair of complementary bit lines.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170815&amp;DB=EPODOC&amp;CC=US&amp;NR=9734896B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170815&amp;DB=EPODOC&amp;CC=US&amp;NR=9734896B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Roine Per Torstein</creatorcontrib><creatorcontrib>Mehendale Mahesh</creatorcontrib><creatorcontrib>Gullapalli Vamsi</creatorcontrib><creatorcontrib>Seetharaman Premkumar</creatorcontrib><creatorcontrib>Menezes Vinod</creatorcontrib><title>Circuits and methods for performance optimization of SRAM memory</title><description>In described examples, a memory controller circuit controls accesses to an SRAM circuit. Precharge mode control circuitry outputs: a burst mode enable signal to the SRAM circuit indicating that a series of SRAM cells along a selected row of SRAM cells will be accessed; a precharge first mode signal to the SRAM circuit indicating that a first access along the selected row will occur; and a precharge last mode signal to the SRAM circuit indicating that a last access along the selected row will occur. The SRAM circuit includes an array of SRAM cells arranged in rows and columns to store data. Each SRAM cell is coupled to: a corresponding word line along a row of SRAM cells; and a corresponding pair of complementary bit lines.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBwzixKLs0sKVZIzEtRyE0tychPKVZIyy9SKEgtAlK5iXnJqQr5BSWZuZlViSWZ-XkK-WkKwUGOvkDFuflFlTwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JD402NLc2MTC0szJyJgIJQByLzEj</recordid><startdate>20170815</startdate><enddate>20170815</enddate><creator>Roine Per Torstein</creator><creator>Mehendale Mahesh</creator><creator>Gullapalli Vamsi</creator><creator>Seetharaman Premkumar</creator><creator>Menezes Vinod</creator><scope>EVB</scope></search><sort><creationdate>20170815</creationdate><title>Circuits and methods for performance optimization of SRAM memory</title><author>Roine Per Torstein ; Mehendale Mahesh ; Gullapalli Vamsi ; Seetharaman Premkumar ; Menezes Vinod</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9734896B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Roine Per Torstein</creatorcontrib><creatorcontrib>Mehendale Mahesh</creatorcontrib><creatorcontrib>Gullapalli Vamsi</creatorcontrib><creatorcontrib>Seetharaman Premkumar</creatorcontrib><creatorcontrib>Menezes Vinod</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Roine Per Torstein</au><au>Mehendale Mahesh</au><au>Gullapalli Vamsi</au><au>Seetharaman Premkumar</au><au>Menezes Vinod</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Circuits and methods for performance optimization of SRAM memory</title><date>2017-08-15</date><risdate>2017</risdate><abstract>In described examples, a memory controller circuit controls accesses to an SRAM circuit. Precharge mode control circuitry outputs: a burst mode enable signal to the SRAM circuit indicating that a series of SRAM cells along a selected row of SRAM cells will be accessed; a precharge first mode signal to the SRAM circuit indicating that a first access along the selected row will occur; and a precharge last mode signal to the SRAM circuit indicating that a last access along the selected row will occur. The SRAM circuit includes an array of SRAM cells arranged in rows and columns to store data. Each SRAM cell is coupled to: a corresponding word line along a row of SRAM cells; and a corresponding pair of complementary bit lines.</abstract><oa>free_for_read</oa></addata></record>
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STATIC STORES
title Circuits and methods for performance optimization of SRAM memory
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T15%3A10%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Roine%20Per%20Torstein&rft.date=2017-08-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9734896B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true