Multi-line width pattern created using photolithography

Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lee Chun-Hung, Yen Bi-Ming, Tai Chun-Liang, Chen De-Fang
Format: Patent
Sprache:eng
Schlagworte:
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