Method of integrating a copper plating process in a through-substrate-via (TSV) on CMOS wafer

A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.

Bibliographische Detailangaben

Hauptverfasser:	Choudhuri Mohommad, Zhang Qing, Lagouge Matthieu, Zeb Gul
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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