Method for manufacturing semiconductor device and semiconductor device

To improve characteristics of a semiconductor device (semiconductor laser), an active layer waveguide (AWG) comprised of InP is formed over an exposed part of a surface of a substrate having an off angle ranging from 0.5° to 1.0° in a [1-1-1] direction from a (100) plane to extend in the [0-1-1] dir...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kato Suguru, Kitamura Shoutarou, Okuda Tetsuro, Watanabe Isao, Ae Satoshi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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