Partial SOI on power device for breakdown voltage improvement

Some embodiments of the present disclosure relate to a method to increase breakdown voltage of a power device. A power device is formed on a silicon-on-insulator (SOI) wafer made up of a device wafer, a handle wafer, and an intermediate oxide layer. A recess is formed in a lower surface of the handl...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yang Fu-Hsiung, Huang Kun-Ming, Lin Long-Shih, Chu Paul, Lin Ming-Yi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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