High throughput programming system and method for a phase change non-volatile memory device

A phase change non-volatile memory device has a memory array with a plurality of memory cells arranged in rows and columns, a column decoder and a row decoder designed to select columns, and, respectively, rows of the memory array during operations of programming of corresponding memory cells. A con...

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Bibliographische Detailangaben

Hauptverfasser:	Di Martino Alberto Jose, Conte Antonino, Khairnar Kailash
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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