Method for forming semiconductor structure

The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts of the fin structure. The top surface of the fin structure which is covered by the gate structure is defined as a first top surface, and the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Li Jhen-Cyuan, Wu Yen-Liang, Lu Shui-Yen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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