Semiconductor device and transistor

This disclosure provides a negative capacitance gate stack structure with a variable positive capacitor to implement a hysteresis free negative capacitance field effect transistors (NCFETs) with improved voltage gain. The gate stack structure provides an effective ferroelectric negative capacitor by...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lai Der-Chuan, Yan Jhih-Yang, Liu Chee-Wee
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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