Power semiconductor transistor with improved gate charge

A slotted gate power transistor is a lateral power device including a substrate, a gate dielectric formed over the substrate, a channel region in the substrate below the gate dielectric and gate electrode layer formed over the gate dielectric. The gate electrode layer overlaps the gate dielectric ab...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Iravani Farshid, Nilsson Jan
Format: Patent
Sprache:eng
Schlagworte:
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