Gas phase oxide removal and passivation of germanium-containing semiconductors and compound semiconductors

A method for gas phase oxide removal and passivation of germanium-containing semiconductors and compound semiconductors is disclosed in various embodiments. According to one embodiment of the invention, a method is provided for processing a semiconductor substrate. The method includes providing a su...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Gaylord Richard H, Barnett Joel
Format: Patent
Sprache:eng
Schlagworte:
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