Read methods of memory devices using bit line sharing

A program method of a nonvolatile memory device includes loading first word line data to be stored in first memory cells connected to a first word line and second word line data to be stored in second memory cells connected to a second word line; setting up upper bit lines according to the first wor...

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1. Verfasser:	Kang Dongku
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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