Semiconductor light device and manufacturing method for the same

Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact l...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Taniguchi Hidehiro, Ohki Yutaka
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Taniguchi Hidehiro
Ohki Yutaka
description Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9627849B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9627849B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9627849B23</originalsourceid><addsrcrecordid>eNqNyjEOwjAMBdAsDAi4gy_AUhDQDYFA7IW5spyfJlKTVI3D-WHgAExveUtz7hCD5GSraJ5pDINXsngHAXGyFDlVx6J1DmmgCPXZkvtO9aDCEWuzcDwWbH6uDN1vz-tjiyn3KBMLErR_de2hOZ727aXZ_VE-i_0xUA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor light device and manufacturing method for the same</title><source>esp@cenet</source><creator>Taniguchi Hidehiro ; Ohki Yutaka</creator><creatorcontrib>Taniguchi Hidehiro ; Ohki Yutaka</creatorcontrib><description>Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170418&amp;DB=EPODOC&amp;CC=US&amp;NR=9627849B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170418&amp;DB=EPODOC&amp;CC=US&amp;NR=9627849B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Taniguchi Hidehiro</creatorcontrib><creatorcontrib>Ohki Yutaka</creatorcontrib><title>Semiconductor light device and manufacturing method for the same</title><description>Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAMBdAsDAi4gy_AUhDQDYFA7IW5spyfJlKTVI3D-WHgAExveUtz7hCD5GSraJ5pDINXsngHAXGyFDlVx6J1DmmgCPXZkvtO9aDCEWuzcDwWbH6uDN1vz-tjiyn3KBMLErR_de2hOZ727aXZ_VE-i_0xUA</recordid><startdate>20170418</startdate><enddate>20170418</enddate><creator>Taniguchi Hidehiro</creator><creator>Ohki Yutaka</creator><scope>EVB</scope></search><sort><creationdate>20170418</creationdate><title>Semiconductor light device and manufacturing method for the same</title><author>Taniguchi Hidehiro ; Ohki Yutaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9627849B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Taniguchi Hidehiro</creatorcontrib><creatorcontrib>Ohki Yutaka</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Taniguchi Hidehiro</au><au>Ohki Yutaka</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor light device and manufacturing method for the same</title><date>2017-04-18</date><risdate>2017</risdate><abstract>Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9627849B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
title Semiconductor light device and manufacturing method for the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T17%3A40%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Taniguchi%20Hidehiro&rft.date=2017-04-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9627849B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true