Dummy gate structure for semiconductor devices

A structure and method for fabricating a spacer structure for semiconductor devices, such as a multi-gate structure, is provided. The dummy gate structure is formed by depositing a dielectric layer, forming a mask over the dielectric layer, and patterning the dielectric layer. The mask is formed to...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Fu Shih-Chi, Chou Chien-Chih
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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