Silicon-containing EUV resist underlayer film-forming composition including additive
There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) h...
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| creator | Yaguchi Hiroaki Shigaki Shuhei Shibayama Wataru Sakamoto Rikimaru Ho BangChing |
| description | There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane. |
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A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. 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A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY CINEMATOGRAPHY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FILLING PASTES HOLOGRAPHY INKS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS |
| title | Silicon-containing EUV resist underlayer film-forming composition including additive |
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