Sn vapor EUV LLP source system for EUV lithography

A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ceglio Natale M, Stearns Daniel, Levesque Richard
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Ceglio Natale M
Stearns Daniel
Levesque Richard
description A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9585236B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9585236B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9585236B23</originalsourceid><addsrcrecordid>eNrjZDAKzlMoSyzIL1JwDQ1T8PEJUCjOLy1KTlUoriwuSc1VSIPK5GSWZOSnFyUWZFTyMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GBLUwtTI2MzJyNjIpQAAPKBKtA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Sn vapor EUV LLP source system for EUV lithography</title><source>esp@cenet</source><creator>Ceglio Natale M ; Stearns Daniel ; Levesque Richard</creator><creatorcontrib>Ceglio Natale M ; Stearns Daniel ; Levesque Richard</creatorcontrib><description>A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of &lt;1019 atoms/cm3 and travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of &lt;1019 electrons/cm3, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; X-RAY TECHNIQUE</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170228&amp;DB=EPODOC&amp;CC=US&amp;NR=9585236B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170228&amp;DB=EPODOC&amp;CC=US&amp;NR=9585236B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ceglio Natale M</creatorcontrib><creatorcontrib>Stearns Daniel</creatorcontrib><creatorcontrib>Levesque Richard</creatorcontrib><title>Sn vapor EUV LLP source system for EUV lithography</title><description>A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of &lt;1019 atoms/cm3 and travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of &lt;1019 electrons/cm3, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>X-RAY TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAKzlMoSyzIL1JwDQ1T8PEJUCjOLy1KTlUoriwuSc1VSIPK5GSWZOSnFyUWZFTyMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GBLUwtTI2MzJyNjIpQAAPKBKtA</recordid><startdate>20170228</startdate><enddate>20170228</enddate><creator>Ceglio Natale M</creator><creator>Stearns Daniel</creator><creator>Levesque Richard</creator><scope>EVB</scope></search><sort><creationdate>20170228</creationdate><title>Sn vapor EUV LLP source system for EUV lithography</title><author>Ceglio Natale M ; Stearns Daniel ; Levesque Richard</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9585236B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>X-RAY TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>Ceglio Natale M</creatorcontrib><creatorcontrib>Stearns Daniel</creatorcontrib><creatorcontrib>Levesque Richard</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ceglio Natale M</au><au>Stearns Daniel</au><au>Levesque Richard</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Sn vapor EUV LLP source system for EUV lithography</title><date>2017-02-28</date><risdate>2017</risdate><abstract>A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of &lt;1019 atoms/cm3 and travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of &lt;1019 electrons/cm3, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9585236B2
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
X-RAY TECHNIQUE
title Sn vapor EUV LLP source system for EUV lithography
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T04%3A18%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ceglio%20Natale%20M&rft.date=2017-02-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9585236B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true