Method of forming a self-aligned stack gate structure for use in a non-volatile memory array
A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions, with each active region having an axis in a first direction. A first insulating material is between each stack gate structure in the second d...
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| creator | Guyot Florence Wege Stephan Miridi Nadia Do Nhan Metzger-Brueckl Gerhard Liu Xian Om'mani Henry Tadayoni Mandana Toren Willem-Jan Su Chieng-Sheng Bernardi Cecile Chen Yueh-Hsin Cuevas Liz |
| description | A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions, with each active region having an axis in a first direction. A first insulating material is between each stack gate structure in the second direction perpendicular to the first direction. Each stack gate structure has a second insulating material over the active region, a charge holding gate over the second insulating material, a third insulating material over the charge holding gate, and a first portion of a control gate over the third insulating material. A second portion of the control gate is over the first portion of the control gate and over the first insulating material adjacent thereto and extending in the second direction. A fourth insulating material is over the second portion of the control gate. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method of forming a self-aligned stack gate structure for use in a non-volatile memory array |
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