Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance

Device structures and fabrication methods for a bipolar junction transistor. A first semiconductor layer is formed on a substrate containing a first terminal. An etch stop layer is formed on the first semiconductor layer, and a second semiconductor layer is formed on the etch stop layer. The second...

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Bibliographische Detailangaben

Hauptverfasser:	Harame David L, Machia Keith J, Alperstein Deborah A, Liu Qizhi, Willets Christa R, Joseph Alvin J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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