Diode with insulated anode regions

Diode with insulated anode regions

A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extend...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Alessandria Antonino, Fragapane Leonardo
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Alessandria Antonino
Fragapane Leonardo
description A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extending from the anode surface in the drift region. The diode further comprises a cathode electrode coupled with the cathode region, and an anode electrode that contacts one or more contacted anode regions of said anode regions and is electrically insulated from one or more floating anode regions of the anode regions. The diode is configured so that charge carriers are injected from the floating anode regions into the drift region in response to applying of a control voltage exceeding a threshold voltage.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9564541B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9564541B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9564541B23</originalsourceid><addsrcrecordid>eNrjZFByycxPSVUozyzJUMjMKy7NSSxJTVFIzAMJFqWmZ-bnFfMwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYEtTMxNTE0MnI2MilAAAZNAlxw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Diode with insulated anode regions</title><source>esp@cenet</source><creator>Alessandria Antonino ; Fragapane Leonardo</creator><creatorcontrib>Alessandria Antonino ; Fragapane Leonardo</creatorcontrib><description>A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extending from the anode surface in the drift region. The diode further comprises a cathode electrode coupled with the cathode region, and an anode electrode that contacts one or more contacted anode regions of said anode regions and is electrically insulated from one or more floating anode regions of the anode regions. The diode is configured so that charge carriers are injected from the floating anode regions into the drift region in response to applying of a control voltage exceeding a threshold voltage.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170207&amp;DB=EPODOC&amp;CC=US&amp;NR=9564541B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170207&amp;DB=EPODOC&amp;CC=US&amp;NR=9564541B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Alessandria Antonino</creatorcontrib><creatorcontrib>Fragapane Leonardo</creatorcontrib><title>Diode with insulated anode regions</title><description>A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extending from the anode surface in the drift region. The diode further comprises a cathode electrode coupled with the cathode region, and an anode electrode that contacts one or more contacted anode regions of said anode regions and is electrically insulated from one or more floating anode regions of the anode regions. The diode is configured so that charge carriers are injected from the floating anode regions into the drift region in response to applying of a control voltage exceeding a threshold voltage.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFByycxPSVUozyzJUMjMKy7NSSxJTVFIzAMJFqWmZ-bnFfMwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYEtTMxNTE0MnI2MilAAAZNAlxw</recordid><startdate>20170207</startdate><enddate>20170207</enddate><creator>Alessandria Antonino</creator><creator>Fragapane Leonardo</creator><scope>EVB</scope></search><sort><creationdate>20170207</creationdate><title>Diode with insulated anode regions</title><author>Alessandria Antonino ; Fragapane Leonardo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9564541B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Alessandria Antonino</creatorcontrib><creatorcontrib>Fragapane Leonardo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Alessandria Antonino</au><au>Fragapane Leonardo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Diode with insulated anode regions</title><date>2017-02-07</date><risdate>2017</risdate><abstract>A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extending from the anode surface in the drift region. The diode further comprises a cathode electrode coupled with the cathode region, and an anode electrode that contacts one or more contacted anode regions of said anode regions and is electrically insulated from one or more floating anode regions of the anode regions. The diode is configured so that charge carriers are injected from the floating anode regions into the drift region in response to applying of a control voltage exceeding a threshold voltage.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9564541B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Diode with insulated anode regions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T04%3A11%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Alessandria%20Antonino&rft.date=2017-02-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9564541B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true