Non-volatile memory (NVM) cell and device structure integration

A dielectric layer is formed over the substrate in the capacitor region and the memory region and a select gate layer is formed over the dielectric layer. A select gate is formed over the memory region and a plurality of lines of electrodes over the capacitor region from the select gate layer. A cha...

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Bibliographische Detailangaben

Hauptverfasser:	Hong Cheong Min, Sekine Satoshi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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