Method for forming MOS device passivation layer and MOS device

Method for forming MOS device passivation layer and MOS device

The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; formi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zhao Hongxing, Huang Guomin, Wang Zhewei, Liu Binbin, Jiao Jibin, Jiang Long, Gao Liuchun, Chen Xuelei
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a silicon nitrogen compound on the PSG. Therefore, the cracks problem of the passivation can be alleviated.