Semiconductor devices including source/drain regions having multiple epitaxial patterns

A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern conta...

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Hauptverfasser: Shin Dongsuk, Yoon Hongsik, Joe Jinyeong, Park Keum Seok, Koo Bonyoung, Yoo Jungho, Lee Byeongchan
Format: Patent
Sprache:eng
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