Semiconductor device
A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region be...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Jeon Jong-Sung Kim Su-Tae Jang Seong-Hun Yoo Jae-Hyun Noh Jin-Hyun Lee Byeong-Ryeol |
description | A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9548401B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9548401B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9548401B23</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZamJhYmBoZORsZEKAEAJdMgug</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>Jeon Jong-Sung ; Kim Su-Tae ; Jang Seong-Hun ; Yoo Jae-Hyun ; Noh Jin-Hyun ; Lee Byeong-Ryeol</creator><creatorcontrib>Jeon Jong-Sung ; Kim Su-Tae ; Jang Seong-Hun ; Yoo Jae-Hyun ; Noh Jin-Hyun ; Lee Byeong-Ryeol</creatorcontrib><description>A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170117&DB=EPODOC&CC=US&NR=9548401B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170117&DB=EPODOC&CC=US&NR=9548401B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Jeon Jong-Sung</creatorcontrib><creatorcontrib>Kim Su-Tae</creatorcontrib><creatorcontrib>Jang Seong-Hun</creatorcontrib><creatorcontrib>Yoo Jae-Hyun</creatorcontrib><creatorcontrib>Noh Jin-Hyun</creatorcontrib><creatorcontrib>Lee Byeong-Ryeol</creatorcontrib><title>Semiconductor device</title><description>A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZamJhYmBoZORsZEKAEAJdMgug</recordid><startdate>20170117</startdate><enddate>20170117</enddate><creator>Jeon Jong-Sung</creator><creator>Kim Su-Tae</creator><creator>Jang Seong-Hun</creator><creator>Yoo Jae-Hyun</creator><creator>Noh Jin-Hyun</creator><creator>Lee Byeong-Ryeol</creator><scope>EVB</scope></search><sort><creationdate>20170117</creationdate><title>Semiconductor device</title><author>Jeon Jong-Sung ; Kim Su-Tae ; Jang Seong-Hun ; Yoo Jae-Hyun ; Noh Jin-Hyun ; Lee Byeong-Ryeol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9548401B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Jeon Jong-Sung</creatorcontrib><creatorcontrib>Kim Su-Tae</creatorcontrib><creatorcontrib>Jang Seong-Hun</creatorcontrib><creatorcontrib>Yoo Jae-Hyun</creatorcontrib><creatorcontrib>Noh Jin-Hyun</creatorcontrib><creatorcontrib>Lee Byeong-Ryeol</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jeon Jong-Sung</au><au>Kim Su-Tae</au><au>Jang Seong-Hun</au><au>Yoo Jae-Hyun</au><au>Noh Jin-Hyun</au><au>Lee Byeong-Ryeol</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2017-01-17</date><risdate>2017</risdate><abstract>A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US9548401B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor device |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T17%3A19%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Jeon%20Jong-Sung&rft.date=2017-01-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9548401B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |