Mask shrink layer for high aspect ratio dielectric etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Pelhos Kalman, Shim Hyunjong, Hudson Eric A, Wong Merrett, Wilcoxson Mark H
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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