High performance refractory metal / copper interconnects to eliminate electromigration

An interconnect structure and method of making the same. A preferred interconnect structure has a first interconnect including a first dual damascene via and narrow line and a second interconnect at the same level as the first including a second dual damascene via and wider line. The first and secon...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bonilla Griselda, Filippi Ronald G, Choi Samuel S, Lustig Naftali E, Bao Junjing, Simon Andrew H
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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