Reverse conducting insulated gate bipolar transistor

Reverse conducting insulated gate bipolar transistor

A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a barrier region of the first conductive type, wherein the barrier region is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one...

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Hauptverfasser: Machida Satoru, Yamashita Yusuke, Hosokawa Hiroshi, Soeno Akitaka, Hirabayashi Yasuhiro, Senoo Masaru, Yasuda Yoshifumi
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Machida Satoru
Yamashita Yusuke
Hosokawa Hiroshi
Soeno Akitaka
Hirabayashi Yasuhiro
Senoo Masaru
Yasuda Yoshifumi
description A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a barrier region of the first conductive type, wherein the barrier region is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one of main surfaces of the semiconductor layer. The barrier region includes a first barrier partial region, wherein a distance between the first barrier partial region and the drift region is a first distance, and a second barrier partial region, wherein a distance between the second barrier partial region and the drift region is a second distance which is longer than the first distance. The second barrier partial region is in contact with a side surface of an insulated trench gate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Reverse conducting insulated gate bipolar transistor
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