Monitoring changes in photomask defectivity

A reticle that is within specifications is inspected so as to generate a baseline event indicating a location and a size value for each unusual reticle feature. After using the reticle in photolithography, the reticle is inspected so as to generate a current event indicating a location and a size va...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Blecher Joseph M, Guan Chun, Xiong Yalin, Wihl Mark J, Comstock Robert A
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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