Dual three-dimensional and RF semiconductor devices using local SOI

Co-fabrication of a radio-frequency (RF) semiconductor device with a three-dimensional semiconductor device includes providing a starting three-dimensional semiconductor structure, the starting structure including a bulk silicon semiconductor substrate, raised semiconductor structure(s) coupled to t...

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Bibliographische Detailangaben

Hauptverfasser:	Samavedam Srikanth Balaji, Singh Jagar
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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