Blankmask and photomask

Provided is a photomask having a high-resolution pattern of a half-pitch of 32 nm or less (particularly, a half-pitch of 22 nm or less), which is manufactured by forming a blankmask in which a light-proof film and a hard film having a small thickness and high etch selectivity with respect to the lig...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kang Geung-Won, Lee Jong-Hwa, Jang Kyu-Jin, Nam Kee-Soo, Kim Chang-Jun, Jeong See-Jun, Shin Cheol, Yang Chul-Kyu
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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