Sensing field effect transistor devices and method of their manufacture
A sensing device includes a sensor die having a sensing region formed at a first surface of the sensor die. The sensing device further includes an encapsulant covering the sensing die, the encapsulant having a cavity formed therein, wherein the cavity exposes the sensing region. A sensitive membrane...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Roop Raymond M Hooper Stephen R Higgins, III Leo M |
| description | A sensing device includes a sensor die having a sensing region formed at a first surface of the sensor die. The sensing device further includes an encapsulant covering the sensing die, the encapsulant having a cavity formed therein, wherein the cavity exposes the sensing region. A sensitive membrane material is deposited within the cavity over the sensing region. A method of manufacturing sensing devices entails mounting a plurality of sensing dies to a carrier, encapsulating the dies in an encapsulant, forming cavities in the encapsulant, the cavities exposing a sensing region of each sensor die, and depositing the sensitive membrane material within each of the cavities. The encapsulating and forming operations can be performed simultaneously using a film-assisted molding (FAM) process, and the depositing operation is performed following FAM at an ambient temperature that is lower than the temperature needed to perform FAM. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9470652B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9470652B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9470652B13</originalsourceid><addsrcrecordid>eNqNyjsOwjAQRVE3FAjYw2wAiT-iBfHpA3U0st8klhI78kxYPxQsgOpKR3fq7hWSxtSQRHSBIAJvZIW_qpYLBbyjhxKnQD2szYGykLWIhXpOo7C3sWDuJsKdYvHrzNHt-rw8lhhyDR3YI8HqV3XaHVeH_ea83v6xfAAZUTPk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Sensing field effect transistor devices and method of their manufacture</title><source>esp@cenet</source><creator>Roop Raymond M ; Hooper Stephen R ; Higgins, III Leo M</creator><creatorcontrib>Roop Raymond M ; Hooper Stephen R ; Higgins, III Leo M</creatorcontrib><description>A sensing device includes a sensor die having a sensing region formed at a first surface of the sensor die. The sensing device further includes an encapsulant covering the sensing die, the encapsulant having a cavity formed therein, wherein the cavity exposes the sensing region. A sensitive membrane material is deposited within the cavity over the sensing region. A method of manufacturing sensing devices entails mounting a plurality of sensing dies to a carrier, encapsulating the dies in an encapsulant, forming cavities in the encapsulant, the cavities exposing a sensing region of each sensor die, and depositing the sensitive membrane material within each of the cavities. The encapsulating and forming operations can be performed simultaneously using a film-assisted molding (FAM) process, and the depositing operation is performed following FAM at an ambient temperature that is lower than the temperature needed to perform FAM.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161018&DB=EPODOC&CC=US&NR=9470652B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161018&DB=EPODOC&CC=US&NR=9470652B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Roop Raymond M</creatorcontrib><creatorcontrib>Hooper Stephen R</creatorcontrib><creatorcontrib>Higgins, III Leo M</creatorcontrib><title>Sensing field effect transistor devices and method of their manufacture</title><description>A sensing device includes a sensor die having a sensing region formed at a first surface of the sensor die. The sensing device further includes an encapsulant covering the sensing die, the encapsulant having a cavity formed therein, wherein the cavity exposes the sensing region. A sensitive membrane material is deposited within the cavity over the sensing region. A method of manufacturing sensing devices entails mounting a plurality of sensing dies to a carrier, encapsulating the dies in an encapsulant, forming cavities in the encapsulant, the cavities exposing a sensing region of each sensor die, and depositing the sensitive membrane material within each of the cavities. The encapsulating and forming operations can be performed simultaneously using a film-assisted molding (FAM) process, and the depositing operation is performed following FAM at an ambient temperature that is lower than the temperature needed to perform FAM.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjsOwjAQRVE3FAjYw2wAiT-iBfHpA3U0st8klhI78kxYPxQsgOpKR3fq7hWSxtSQRHSBIAJvZIW_qpYLBbyjhxKnQD2szYGykLWIhXpOo7C3sWDuJsKdYvHrzNHt-rw8lhhyDR3YI8HqV3XaHVeH_ea83v6xfAAZUTPk</recordid><startdate>20161018</startdate><enddate>20161018</enddate><creator>Roop Raymond M</creator><creator>Hooper Stephen R</creator><creator>Higgins, III Leo M</creator><scope>EVB</scope></search><sort><creationdate>20161018</creationdate><title>Sensing field effect transistor devices and method of their manufacture</title><author>Roop Raymond M ; Hooper Stephen R ; Higgins, III Leo M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9470652B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Roop Raymond M</creatorcontrib><creatorcontrib>Hooper Stephen R</creatorcontrib><creatorcontrib>Higgins, III Leo M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Roop Raymond M</au><au>Hooper Stephen R</au><au>Higgins, III Leo M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Sensing field effect transistor devices and method of their manufacture</title><date>2016-10-18</date><risdate>2016</risdate><abstract>A sensing device includes a sensor die having a sensing region formed at a first surface of the sensor die. The sensing device further includes an encapsulant covering the sensing die, the encapsulant having a cavity formed therein, wherein the cavity exposes the sensing region. A sensitive membrane material is deposited within the cavity over the sensing region. A method of manufacturing sensing devices entails mounting a plurality of sensing dies to a carrier, encapsulating the dies in an encapsulant, forming cavities in the encapsulant, the cavities exposing a sensing region of each sensor die, and depositing the sensitive membrane material within each of the cavities. The encapsulating and forming operations can be performed simultaneously using a film-assisted molding (FAM) process, and the depositing operation is performed following FAM at an ambient temperature that is lower than the temperature needed to perform FAM.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US9470652B1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Sensing field effect transistor devices and method of their manufacture |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T10%3A44%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Roop%20Raymond%20M&rft.date=2016-10-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9470652B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |