Controlling the reflow behaviour of BPSG films and devices made thereof

A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Schoenherr Helmut, Huetter Harald, Kahn Markus, Joshi Ravi, Steinbrenner Juergen, Poelzl Martin, Hofer Heimo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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