Semiconductor device

A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Shirai Nobuyuki, Matsuura Nobuyoshi
Format: Patent
Sprache:eng
Schlagworte:
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