Merged source drain epitaxy

A semiconductor device such as a FinFET includes a plurality of fins formed upon a substrate and a gate covering a portion of the fins. Diamond-shaped volumes are formed on the sidewalls of the fins by epitaxial growth which may be limited to avoid merging of the volumes or where the epitaxy volumes...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Rausch Werner A, Chudzik Michael P, McStay Kevin, Pei Chengwen, Narasimha Shreesh, Greene Brian J, Maciejewski Edward P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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