Transistor devices with high-k insulation layers

Transistor devices with high-k insulation layers

An integrated circuit product includes first and second transistors positioned in and above first and second active regions. The first transistor has a first gate length and a first gate material stack that includes a first gate dielectric layer having a first thickness and at least one layer of met...

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Hauptverfasser: Flachowsky Stefan, Gerhardt Martin, Kessler Matthias
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Flachowsky Stefan
Gerhardt Martin
Kessler Matthias
description An integrated circuit product includes first and second transistors positioned in and above first and second active regions. The first transistor has a first gate length and a first gate material stack that includes a first gate dielectric layer having a first thickness and at least one layer of metal positioned above the first gate dielectric layer, the first gate dielectric layer including a layer of a first high-k insulating material and a layer of a second high-k insulating material positioned on the layer of the first high-k insulating material. The second transistor has a second gate length and a second gate material stack that includes a second gate dielectric layer having a second thickness positioned above the second active region and at least one layer of metal positioned above the second gate dielectric layer, the second gate dielectric layer including a layer of the second high-k insulating material.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Transistor devices with high-k insulation layers
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